- Title
- Influence of argon ion implantation on the thermoluminescence properties of aluminium oxide
- Creator
- Khabo, Bokang
- ThesisAdvisor
- Nsengiyumva, Schadrack
- ThesisAdvisor
- Mongwaketsi, Nametso
- Subject
- Aluminum oxide
- Subject
- Thermoluminescence
- Subject
- Ion implantation
- Subject
- Kinetic analysis
- Subject
- Oxygen vacancies
- Subject
- Argon
- Subject
- Irradiation
- Date
- 2022-04-06
- Type
- Master's thesis
- Type
- text
- Identifier
- http://hdl.handle.net/10962/234220
- Identifier
- vital:50173
- Description
- The influence of argon ion implantation on the thermoluminescence properties (TL) of aluminium oxide (alumina) was investigated. Aluminium oxide (Al2O3) samples were implanted with 80 keV Ar ions. An unimplanted sample and samples implanted at fluences of 1×1014, 5×1014, 1×1015, 5×1015, 1×1016 Ar+/cm2 were irradiated at a dose of 40 Gy and heated at a rate of 1°C/s using a Risø reader model TL/OSL-DA-20 equipped with a Hoya U-340 filter. The thermoluminescence glow curves showed five distinct peaks with main peaks at 178°C, 188°C, 176°C, 208°C, 216°C and 204°C for the unimplanted sample as well as implanted samples. The peak positions of the samples were independent of the irradiation dose suggesting that the samples were characterised by first order kinetics. This was also confirmed by the TM-TSTOP analysis. It was observed that the TL intensity decreases with fluence of implantation. This observation suggests that the concentration of electron traps responsible for thermoluminescence decreases with ion implantation. The decrease in electron concentration might be due to the formation of non-radiative transition bands or the creation of defect clusters and extended defects following the ion implantation and ion fluence increases. The stopping and range of atoms in matter (SRIM) program was used to correlate the TL response of Al2O3 with defects under ion implantation. Subsequent to ion implantation, it was found that the number of oxygen vacancies which are related to electron traps are higher than the number of aluminium vacancies. Kinetic analysis was carried out using the initial rise, Chens peak shape, various heating rate, the whole glow curve, glow curve fitting and the isothermal decay methods. The activation energy was found to be around 0.8 eV and the frequency factor to be of the order 108 𝑠−1 regardless of the implantation fluence. This means that argon ion implantation did not affect the nature of electron traps. The dosimetric features of samples were also investigated at doses in the range of 40 – 200 Gy. Samples generally showed a superlinear response at doses less than 140 Gy and sublinear response at doses higher than 160 Gy.
- Description
- Thesis (MSc) -- Faculty of Science, Physics and Electronics, 2022
- Format
- computer, online resource, application/pdf, 1 online resource (84 pages), pdf
- Publisher
- Rhodes University, Faculty of Science, Physics and Electronics
- Language
- English
- Rights
- Khabo, Bokang
- Rights
- Use of this resource is governed by the terms and conditions of the Creative Commons "Attribution-NonCommercial-ShareAlike" License (http://creativecommons.org/licenses/by-nc-sa/2.0/)
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| Thumbnail | File | Description | Size | Format | |||
|---|---|---|---|---|---|---|---|
| View Details | SOURCE1 | KHABO-MSC-TR22-66.pdf | 1 MB | Adobe Acrobat PDF | View Details |