Influence of argon ion implantation on the thermoluminescence properties of aluminium oxide
- Authors: Khabo, Bokang
- Date: 2022-04-06
- Subjects: Aluminum oxide , Thermoluminescence , Ion implantation , Kinetic analysis , Oxygen vacancies , Argon , Irradiation
- Language: English
- Type: Master's thesis , text
- Identifier: http://hdl.handle.net/10962/234220 , vital:50173
- Description: The influence of argon ion implantation on the thermoluminescence properties (TL) of aluminium oxide (alumina) was investigated. Aluminium oxide (Al2O3) samples were implanted with 80 keV Ar ions. An unimplanted sample and samples implanted at fluences of 1×1014, 5×1014, 1×1015, 5×1015, 1×1016 Ar+/cm2 were irradiated at a dose of 40 Gy and heated at a rate of 1°C/s using a Risø reader model TL/OSL-DA-20 equipped with a Hoya U-340 filter. The thermoluminescence glow curves showed five distinct peaks with main peaks at 178°C, 188°C, 176°C, 208°C, 216°C and 204°C for the unimplanted sample as well as implanted samples. The peak positions of the samples were independent of the irradiation dose suggesting that the samples were characterised by first order kinetics. This was also confirmed by the TM-TSTOP analysis. It was observed that the TL intensity decreases with fluence of implantation. This observation suggests that the concentration of electron traps responsible for thermoluminescence decreases with ion implantation. The decrease in electron concentration might be due to the formation of non-radiative transition bands or the creation of defect clusters and extended defects following the ion implantation and ion fluence increases. The stopping and range of atoms in matter (SRIM) program was used to correlate the TL response of Al2O3 with defects under ion implantation. Subsequent to ion implantation, it was found that the number of oxygen vacancies which are related to electron traps are higher than the number of aluminium vacancies. Kinetic analysis was carried out using the initial rise, Chens peak shape, various heating rate, the whole glow curve, glow curve fitting and the isothermal decay methods. The activation energy was found to be around 0.8 eV and the frequency factor to be of the order 108 𝑠−1 regardless of the implantation fluence. This means that argon ion implantation did not affect the nature of electron traps. The dosimetric features of samples were also investigated at doses in the range of 40 – 200 Gy. Samples generally showed a superlinear response at doses less than 140 Gy and sublinear response at doses higher than 160 Gy. , Thesis (MSc) -- Faculty of Science, Physics and Electronics, 2022
- Full Text:
- Date Issued: 2022-04-06
- Authors: Khabo, Bokang
- Date: 2022-04-06
- Subjects: Aluminum oxide , Thermoluminescence , Ion implantation , Kinetic analysis , Oxygen vacancies , Argon , Irradiation
- Language: English
- Type: Master's thesis , text
- Identifier: http://hdl.handle.net/10962/234220 , vital:50173
- Description: The influence of argon ion implantation on the thermoluminescence properties (TL) of aluminium oxide (alumina) was investigated. Aluminium oxide (Al2O3) samples were implanted with 80 keV Ar ions. An unimplanted sample and samples implanted at fluences of 1×1014, 5×1014, 1×1015, 5×1015, 1×1016 Ar+/cm2 were irradiated at a dose of 40 Gy and heated at a rate of 1°C/s using a Risø reader model TL/OSL-DA-20 equipped with a Hoya U-340 filter. The thermoluminescence glow curves showed five distinct peaks with main peaks at 178°C, 188°C, 176°C, 208°C, 216°C and 204°C for the unimplanted sample as well as implanted samples. The peak positions of the samples were independent of the irradiation dose suggesting that the samples were characterised by first order kinetics. This was also confirmed by the TM-TSTOP analysis. It was observed that the TL intensity decreases with fluence of implantation. This observation suggests that the concentration of electron traps responsible for thermoluminescence decreases with ion implantation. The decrease in electron concentration might be due to the formation of non-radiative transition bands or the creation of defect clusters and extended defects following the ion implantation and ion fluence increases. The stopping and range of atoms in matter (SRIM) program was used to correlate the TL response of Al2O3 with defects under ion implantation. Subsequent to ion implantation, it was found that the number of oxygen vacancies which are related to electron traps are higher than the number of aluminium vacancies. Kinetic analysis was carried out using the initial rise, Chens peak shape, various heating rate, the whole glow curve, glow curve fitting and the isothermal decay methods. The activation energy was found to be around 0.8 eV and the frequency factor to be of the order 108 𝑠−1 regardless of the implantation fluence. This means that argon ion implantation did not affect the nature of electron traps. The dosimetric features of samples were also investigated at doses in the range of 40 – 200 Gy. Samples generally showed a superlinear response at doses less than 140 Gy and sublinear response at doses higher than 160 Gy. , Thesis (MSc) -- Faculty of Science, Physics and Electronics, 2022
- Full Text:
- Date Issued: 2022-04-06
The thermal decomposition of irradiated silver permanganate
- Authors: Sole, Michael John
- Date: 1959
- Subjects: Decomposition (Chemistry) , Irradiation , Permanganates , Silver compounds , Metals -- Thermal properties
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:4502 , http://hdl.handle.net/10962/d1013265
- Description: The thermal decomposition of silver permanganate, pre-irradiated in BEPO and in a ⁶°C₀ Ϫ 'hot spot' has been investigated in the temperature range 100 - 125°C. The results are similar to those for irradiated KMn0₄ and the mechanism proposed for the latter is again suggested. The activation energy for the migration of point defects over the induction period is 1.03 ev. The decompositions of unirradiated and irradiated crystals differ in that the latter undergo physical disintegration over the acceleratory period. X-ray studies immediately prior to disintegration show strain and fragmentation in the irradiated crystal. An explanation involving the annealing of point defects at dislocation is advanced to explain the changes produced in the p/t plots with increased dosage, and fixed decomposition temperature. Summary, p. 94.
- Full Text:
- Date Issued: 1959
- Authors: Sole, Michael John
- Date: 1959
- Subjects: Decomposition (Chemistry) , Irradiation , Permanganates , Silver compounds , Metals -- Thermal properties
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:4502 , http://hdl.handle.net/10962/d1013265
- Description: The thermal decomposition of silver permanganate, pre-irradiated in BEPO and in a ⁶°C₀ Ϫ 'hot spot' has been investigated in the temperature range 100 - 125°C. The results are similar to those for irradiated KMn0₄ and the mechanism proposed for the latter is again suggested. The activation energy for the migration of point defects over the induction period is 1.03 ev. The decompositions of unirradiated and irradiated crystals differ in that the latter undergo physical disintegration over the acceleratory period. X-ray studies immediately prior to disintegration show strain and fragmentation in the irradiated crystal. An explanation involving the annealing of point defects at dislocation is advanced to explain the changes produced in the p/t plots with increased dosage, and fixed decomposition temperature. Summary, p. 94.
- Full Text:
- Date Issued: 1959
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