https://commons.ru.ac.za/vital/access/manager/Index ${session.getAttribute("locale")} 5 https://commons.ru.ac.za/vital/access/manager/Repository/vital:10525 with bonding partial dislocations of the type 1/6 <121> by using image simulation. The SFs were also found to be predominantly extrinsic in nature by using HRTEM analysis of SFs viewed edge-on. Also both bright and dar-field images of SFs on inclined planes exhibited symmetrical and complementary fringe contrast images. This is a result of the anomalous absorption ratio of SiC lying between that of Si and diamond. The analysis of the annealed and unannealed irradiated β-SiC yielded no evidence of radiation damage or change in the crystal structure of the β-SiC. This confirmed that β-SiC is a radiation resistant material. The critical proton dose for the creation of small dislocation loops seems to be higher than for other compound semiconductors with the zinc-blende structure.]]> Wed 12 May 2021 21:04:28 SAST ]]> https://commons.ru.ac.za/vital/access/manager/Repository/vital:33383 Wed 12 May 2021 15:47:15 SAST ]]>